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Wednesday, April 15, 2020 | History

2 edition of Half-Colloquium on RF and Microwave Power Semiconductor Devices found in the catalog.

Half-Colloquium on RF and Microwave Power Semiconductor Devices

Half-Colloquium on RF and Microwave Power Semiconductor Devices (1985 London)

Half-Colloquium on RF and Microwave Power Semiconductor Devices

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Published by IEE Electronics Division in London .
Written in English


Edition Notes

Statementorganised by Professional Group E3 (Microelectronics and Semiconductor Devices, E10 (Circuit Theory and Design), E12 (Microwave devices and techniques); [held] Wednesday 22 May 1985.
SeriesDigest -- no. 1985/61
ContributionsInstitution of Electrical Engineers. Electronics Division.
ID Numbers
Open LibraryOL14354766M

A PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts.. The wide intrinsic region is in contrast to an ordinary p–n wide intrinsic region makes the PIN diode an inferior .


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Half-Colloquium on RF and Microwave Power Semiconductor Devices by Half-Colloquium on RF and Microwave Power Semiconductor Devices (1985 London) Download PDF EPUB FB2

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A microwave PIN diode is a semiconductor device that operates as a variable resistor at RF and Microwave frequencies. A PIN diode is a current controlled device in contrast to a varactor diode which is a voltage controlled device. Varactors diodes are design with thin epitaxial I-layers (for a high “Q” in the.

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